EPITAXIAL WAFER, AND METHOD FOR PRODUCING SAME

Title:

EPITAXIAL WAFER, AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2024/075430

Kind Code:

A1

Abstract:

Provided is a method for producing an epitaxial wafer, the method comprising: a step for exposing a substrate 10 comprising a β-Ga2O3-based single crystal and containing a donor impurity to a GaCl gas and an O2 gas to allow an epitaxial film 12 comprising the β-Ga2O3-based single crystal to grow on a main surface 11 of the substrate 10 by an HVPE method, thereby forming an epitaxial wafer 1; and a step for subjecting the epitaxial wafer 1 to an annealing treatment at a temperature of 1200°C or higher under a nitrogen atmosphere.

More Like This:

JP3820704	METHOD AND EQUIPMENT FOR MANUFACTURE OF MANGANESE OXIDE THIN FILM
JP2931301	PROBLEM TO BE SOLVED: To grow a transition metal oxide single crystal.

Inventors:

LIN CHIA-HUNG (JP)
SASAKI KOHEI (JP)

Application Number:

PCT/JP2023/030992

Publication Date:

April 11, 2024

Filing Date:

August 28, 2023

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NOVEL CRYSTAL TECH INC (JP)

International Classes:

C30B29/16; C30B33/02; H01L21/20; H01L21/365

Foreign References:

JP2014210707A	2014-11-13
JP2015091740A	2015-05-14
JP2016039194A	2016-03-22
JP2013058636A	2013-03-28
CN109056058A	2018-12-21

Attorney, Agent or Firm:

HIRATA & PARTNERS (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: DECONTAMINATION SOLUTION AND DEVICE AND METHOD FOR DECONTAMINATION USING SAME

Next Patent: SKIN TREATMENT DEVICE