Title:
EMBEDDING METHOD AND FILM FORMING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/080169
Kind Code:
A1
Abstract:
An embedding method according to one embodiment of the present disclosure is for embedding a metal oxide film in a recess formed in the surface of a substrate, the method including: a step for forming the metal oxide film by supplying a metal raw material gas and an oxidant to the recess; and a step for etching a portion of the metal oxide film by supplying, to the metal oxide film, an etching gas containing SOCl2 and/or (COCl)2.
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Inventors:
HASEGAWA TOSHIO (JP)
ISHII KATSUTOSHI (JP)
ISHII KATSUTOSHI (JP)
Application Number:
PCT/JP2021/036643
Publication Date:
April 21, 2022
Filing Date:
October 04, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/316; C23C16/04; C23C16/40; H01L21/3065; H01L21/31
Domestic Patent References:
WO2020050124A1 | 2020-03-12 | |||
WO2017030150A1 | 2017-02-23 |
Foreign References:
JP2019501518A | 2019-01-17 | |||
JP2015019075A | 2015-01-29 | |||
JP2020059916A | 2020-04-16 | |||
JP2015149461A | 2015-08-20 | |||
JPH05291204A | 1993-11-05 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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