Title:
COMPOSITION FOR POST-POLISHING TO BE USED AFTER PRIMARY POLISHING OF SILICON WAFERS
Document Type and Number:
WIPO Patent Application WO/2023/063213
Kind Code:
A1
Abstract:
[Problem] For the purpose of eliminating bumps in the peripheries of laser marks in a wafer polishing process, the present invention provides: a polishing composition that provides a flat polished surface; and a method for polishing a wafer, the method using this polishing composition. [Solution] The present invention provides a composition for post-polishing, the composition being used for the purpose of eliminating laser marks remaining after polishing by means of a composition for primary polishing of silicon wafers, the composition for primary polishing containing silica particles, water and a basic compound. This composition for post-polishing contains silica particles, water, tetraalkyl ammonium ions and a water-soluble polymer; the tetraalkyl ammonium ions are contained relative to SiO2 in the silica particles at a mass ratio of 0.200:1 to 1.000:1; SiO2 dissolved in the polishing composition is contained relative to SiO2 in the silica particles at a mass ratio of 0.100:1 to 1.500:1; and the water-soluble polymer is contained relative to SiO2 in the silica particles at a mass ratio of 0.005:1 to 0.05:1. The silica particles have an average primary particle diameter of 1 nm to 100 nm.
Inventors:
ISHIJIMA HIBIKI (JP)
ISHIMIZU EIICHIRO (JP)
ISHIMIZU EIICHIRO (JP)
Application Number:
PCT/JP2022/037451
Publication Date:
April 20, 2023
Filing Date:
October 06, 2022
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2021065815A1 | 2021-04-08 | |||
| WO2019124442A1 | 2019-06-27 |
Foreign References:
| JP2019186346A | 2019-10-24 | |||
| JP2021106246A | 2021-07-26 | |||
| JP2020035870A | 2020-03-05 |
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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