Title:
COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/007938
Kind Code:
A1
Abstract:
The present invention provides a composition for chemical mechanical polishing, the composition enabling high-speed polishing of a silicon nitride film while restraining the speed of the silicon oxide film polishing, the composition also reducing the occurrence of dishing in the silicon oxide film that has been polished. Also provided is a polishing method. The composition for chemical mechanical polishing according to the present invention contains (A) abrasive grains and (B) a liquid medium; the zeta potential of component (A) in the composition for chemical mechanical polishing is -10 mV or less; and the average particle diameter of component (A) in the composition for chemical mechanical polishing is 5 nm to 30 nm.
Inventors:
YAMADA YUUYA (JP)
Application Number:
PCT/JP2022/021949
Publication Date:
February 02, 2023
Filing Date:
May 30, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
C01B33/149; B24B37/00; C09G1/02; C09K3/14; H01L21/304
Domestic Patent References:
| WO2019181437A1 | 2019-09-26 | |||
| WO2013172111A1 | 2013-11-21 | |||
| WO2015178476A1 | 2015-11-26 |
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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