Title:
CHEMICAL-MECHANICAL COMBINED MACHINING METHOD FOR SILICON CARBIDE SURFACE
Document Type and Number:
WIPO Patent Application WO/2023/142579
Kind Code:
A1
Abstract:
A chemical-mechanical combined machining method for a silicon carbide surface, comprising the following steps: first mounting a grinding and polishing tool (1) and silicon carbide (2) on a machine table of grinding and polishing equipment, respectively, the grinding and polishing tool (1) comprising active metal and abrasive particles which are formed in a combined mode; then pressing the silicon carbide (2) to the surface of the grinding and polishing tool (1) under the action of an external force; finally enabling the grinding and polishing tool (1) rotating at a high speed to move relative to the silicon carbide (2), thereby generating high-speed friction and inducing the active metal and the silicon carbide (2) to have a chemical reaction; and removing a reaction layer by means of mechanical action between the abrasive particles and the silicon carbide (2), thereby forming a chemical-mechanical combined cycle machining mode, and implementing surface grinding and polishing of the silicon carbide (2).
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Inventors:
HUANG HUI (CN)
WU MIN (CN)
ZHANG FUNAN (CN)
WU MIN (CN)
ZHANG FUNAN (CN)
Application Number:
PCT/CN2022/129543
Publication Date:
August 03, 2023
Filing Date:
November 03, 2022
Export Citation:
Assignee:
UNIV HUAQIAO (CN)
International Classes:
B24B7/22; B24B7/04; B24B7/06; B24B41/06; H01L21/306
Foreign References:
CN114406825A | 2022-04-29 | |||
CN113524025A | 2021-10-22 | |||
CN110774118A | 2020-02-11 | |||
CN101972979A | 2011-02-16 | |||
JP2014187131A | 2014-10-02 |
Attorney, Agent or Firm:
QUANZHOU WENHUA PATENT AGENY CO., LTD. (CN)
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