Title:
CAPACITOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/166075
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors, and in particular, to a capacitor structure and a preparation method therefor, which are used for solving the technical problem of poor performance of the capacitor structure. The preparation method for the capacitor structure comprises: forming a dielectric layer on a first electrode, the dielectric layer comprising a metal oxide layer having a preset oxide doped, and a part of the preset oxide and a part of a metal oxide sharing an oxygen atom; and forming a second electrode on the dielectric layer, the first electrode, the dielectric layer, and the second electrode constituting the capacitor structure. By forming a metal oxide layer in which a part of the preset oxide and a part of the metal oxide share an oxygen atom, the oxygen content can be reduced, thereby reducing the influence of the preset oxide on the reduction of the dielectric constant of the capacitor structure, so as to improve the performance of the capacitor structure. In addition, the preset oxide can be well doped in the metal oxide layer, thereby further improving the performance of the capacitor structure.
Inventors:
SU XINGSONG (CN)
BAI WEIPING (CN)
YU MENGKANG (CN)
BAI WEIPING (CN)
YU MENGKANG (CN)
Application Number:
PCT/CN2021/101299
Publication Date:
August 11, 2022
Filing Date:
June 21, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L49/02
Foreign References:
| CN103247622A | 2013-08-14 | |||
| CN101604626A | 2009-12-16 | |||
| CN112928210A | 2021-06-08 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
Download PDF: