Title:
CAPACITOR MANUFACTURING METHOD, CAPACITOR AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/206738
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors. Disclosed are a capacitor manufacturing method, a capacitor and a memory. The capacitor manufacturing method comprises: providing a substrate; forming a first electrode on the substrate, wherein the first electrode extends in a first direction parallel to the substrate, the size of the first electrode in the first direction is greater than the sizes of the first electrode in a second direction and in a third direction, and the first direction, the second direction and the third direction are perpendicular to one another; forming a dielectric layer, which covers the first electrode; and forming a second electrode, which covers the dielectric layer.
Inventors:
YANG MENGMENG (CN)
XIAO DEYUAN (CN)
XIAO DEYUAN (CN)
Application Number:
PCT/CN2022/098120
Publication Date:
November 02, 2023
Filing Date:
June 10, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
CHANGXIN JIDIAN BEIJING MEMORY TECH CO LTD (CN)
CHANGXIN JIDIAN BEIJING MEMORY TECH CO LTD (CN)
International Classes:
H01L21/8242; H01L49/02; H01L27/108
Foreign References:
| CN114582809A | 2022-06-03 | |||
| CN109616474A | 2019-04-12 | |||
| CN113889473A | 2022-01-04 | |||
| CN1979705A | 2007-06-13 | |||
| KR20190038225A | 2019-04-08 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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