Title:
ANTIFERROMAGNETIC MAGNETIC RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/241161
Kind Code:
A1
Abstract:
Provided in the present invention are an antiferromagnetic magnetic random access memory device and a manufacturing method therefor. The device comprises a ferromagnetic thin-film structural body, an antiferromagnetic thin-film structural body, and a tunnel insulating thin-film structural body sandwiched between the ferromagnetic thin-film structural body and the antiferromagnetic thin-film structural body. The manufacturing method for the device comprises: on a substrate and from bottom to top, sequentially preparing a first electrode, preparing a first ferromagnetic thin-film structural body and applying an external magnetic field to the first ferromagnetic thin-film structural body, preparing a first tunnel insulating thin-film structural body and an antiferromagnetic thin-film structural body, preparing a second tunnel insulating thin-film structural body, preparing a second ferromagnetic thin-film structural body and applying, to the second ferromagnetic thin-film structural body, an external magnetic field opposite that of the first ferromagnetic thin-film structural body, and preparing a second electrode. The present invention can realize an information writing and reading mode in which the size of a device is reduced, can realize high-density storage, and also has characteristics such as terahertz-level high-speed information writing and external magnetic interference resistance of an antiferromagnet.
Inventors:
YE SHUJUN (CN)
WANG YELIANG (CN)
WANG YELIANG (CN)
Application Number:
PCT/CN2023/084240
Publication Date:
December 21, 2023
Filing Date:
March 28, 2023
Export Citation:
Assignee:
BEIJING INSTITUTE TECH (CN)
YANGTZE DEITA GRADUATE SCHOOI OF BEIJING INSTITUTE OF TECH JIAXING (CN)
YANGTZE DEITA GRADUATE SCHOOI OF BEIJING INSTITUTE OF TECH JIAXING (CN)
International Classes:
H10B61/00; G11C11/16; H10N50/01; H10N50/10; H10N50/85
Foreign References:
| US20210383850A1 | 2021-12-09 | |||
| CN111384235A | 2020-07-07 | |||
| CN112652701A | 2021-04-13 | |||
| CN109037434A | 2018-12-18 | |||
| CN103827969A | 2014-05-28 |
Attorney, Agent or Firm:
BEIJING GAOWO LAW FIRM (CN)
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