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Title:
AL WIRING MATERIAL
Document Type and Number:
WIPO Patent Application WO/2022/168789
Kind Code:
A1
Abstract:
Provided is an Al wiring material with which the joined reliability of a joint under high-temperature environments during the operation of a semiconductor device can be sufficiently obtained. An Al wiring material contains at least one among Pd and Pt, with the balance comprising Al, wherein: when the content of Pd is x1a [mass ppm] and the content of Pt is x1b [mass ppm], 3≤x1a≤90 or 10≤x1b≤250 is satisfied and 3≤(x1a+x1b)≤300 is satisfied; and the average crystal grain diameter in a cross section perpendicular to the longitudinal direction of the Al wiring material is 3-35 μm.

Inventors:
UNO TOMOHIRO (JP)
SUTO YUYA (JP)
OYAMADA TETSUYA (JP)
ODA DAIZO (JP)
KURIHARA YUTO (JP)
ETO MOTOKI (JP)
Application Number:
PCT/JP2022/003584
Publication Date:
August 11, 2022
Filing Date:
January 31, 2022
Export Citation:
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Assignee:
NIPPON MICROMETAL CORP (JP)
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)
International Classes:
C22C21/00; C22F1/00; C22F1/04; H01L21/60
Foreign References:
JP2014224283A2014-12-04
JPS6132444A1986-02-15
JPS6095948A1985-05-29
JPS60177667A1985-09-11
JP2008311383A2008-12-25
JP2014129578A2014-07-10
JP2002314038A2002-10-25
JP2016511529A2016-04-14
JP2016152316A2016-08-22
JP2014129578A2014-07-10
JP2002246542A2002-08-30
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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