PURPOSE: To manufacture a high quality resin enclosed semiconductor device with excellent moisture resistance subjected to no shortcircuit trouble by a method wherein the periphery of fine metal wire and the surface of electrode of semiconductor chips are covered with the resin different from the conventional enclosing resin.

CONSTITUTION: The permeating route of water content from the surface of enclosing resin 7 may be assumed to be two kinds, i.e. the first route directly reaching the oxide insulating film 2 from the surface of enclosing resin 7 as shown by the arrow mark A while the second route reaches the surface of the polyamide base resin 8 covering the periphery of the fine metal wire 6 from the surface of enclosing resin 7 and then reaching said oxide insulating film 2 of the semiconductor chip along the interface of said enclosing resin 7 and said polyamide base resin 8 as shown by the arrow mark B. However, the permeated water content can not reach the electrode 3 since the surface of electrode 3 and the periphery of fine metal wire 6 are covered with said polyamide base resin 8. Therefore the breakdown around the electrode due to water content and the shortcircuit trouble of fine metal wire in case of resin enclosing may be entirely prevented.