Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59175724
Kind Code:
A
Abstract:
PURPOSE:To prevent exfoliation of positive photoresist in the periphery of semiconductor substrate by coating only the periphery of semiconductor substrate with negative photoresist after coating the entire part of semiconductor substrate with a positive photoresist. CONSTITUTION:The specified amount of positive photoresist is dropped from the nozzle disposed to the upper part of center of wafer 1. The entire part of wafer 1 is uniformly coated with the positive photoresist film 2 by rotating the wafer 1. Next, the specified amount of negative photoresist is dropped from the nozzle disposed at the upper part of circumference of wafer 1 while the wafer 1 is being rotated. Thereby, the entire part of wafer 1 is coated with the film 2 and the resist film of double layer structure of the film 2 and the negative photoresist film 3 is formed only to the periphery of wafer 1. According to this method, the film 3 formed on the film 2 at the periphery of wafer 1 does not have fragility different from the film 2 and since both are sufficiently placed in close contactness and therefore the film 2 is not exfoliated.
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Inventors:
ASAYAMA KUNIO
Application Number:
JP5071583A
Publication Date:
October 04, 1984
Filing Date:
March 26, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
G03F7/16; H01L21/027; (IPC1-7): H01L21/30; G03F7/16
Attorney, Agent or Firm:
Takehiko Suzue