Title:
MANUFACTURE OF SINGLE CRYSTAL THIN FILM
Document Type and Number:
Japanese Patent JPS6015916
Kind Code:
A
Abstract:
PURPOSE:To enable to form a favorable single crystal film generating no grain according to scanning of a linear heater by a method wherein stripe type patterns are formed at the specified interval to an insulating film deposited on the surface of an Si substrate to expose the surface of the Si substrate, and after then a polycrystalline Si film is adhered thereon. CONSTITUTION:An SiO2 film 2 is formed on the surface of an Si substrate 1 as to have opening parts. A poly-Si film 3 is adhered on the whole surface, and moreover an SiO2 film 4 is deposited from the top part thereof, a linear carbon is heated from the top part to be scanned to one edge from another edge of the sample perpendicularly in relation to the thermal oxide film having the opening parts. The deposited polycrystalline Si film is dissolved to be converted into a single crystal from a region coming in contact with the Si substrate according to liquid phase epitaxial growth structure, and although single crystal regions are formed even on the SiO2 films 2, while the regions thereof are limited within 100mum from the opening edges of the SiO2 films.
Inventors:
TAMURA MASAO
KOZUKA KOUJI
KOZUKA KOUJI
Application Number:
JP12323883A
Publication Date:
January 26, 1985
Filing Date:
July 08, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/20; (IPC1-7): H01L21/20; H01L21/324
Attorney, Agent or Firm:
Akio Takahashi