To form an integration type switching mechanism in high density interconnection(HDI) circuit environment.

This switching structure is provided with an HDI plastic interconnection layer 12 laminated on a base 10 layer, a cavity 16 in the HDI plastic interconnection layer 12, at least one pattern of a shape memory alloy(SMA) layer 22 laminated on the HDI plastic interconnection layer and the cavity, at least one pattern of conductive layer on the SMA layer, a fixed contact pad installed on the base in the cavity, and a movable contact pad installed on a part of the pattern of SMA layer 22 in the cavity. A switch is connected and closed electrically through the contact of the movable contact pad to the fixed contact pad when it is in a first stabilized position owing to the deformation by energizing of the pattern of SMA layer. IN a second stabilized position, the contact pad does not come in contact and an open switch is formed.