Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH1126700
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To prevent a semiconductor device from being damaged by means of the radiation of laser at the time of laser trimming, by providing an island- like aluminum protection film formed at a place between an interlayer insulating film and a field oxidation film, which is just below a part being the target of laser radiation in short wiring. SOLUTION: Short wiring SL is patterned on a part of an Al (aluminum) wiring layer 4 for laser trimming in narrow width. An island-like Al protection film 6 is formed in an area for covering the target T between the interlayer insulating film and the field oxidation film, which is just below the part becoming the target T of laser radiation in short wiring SL. Since laser radiated at the time of laser trimming considerably consumes energy in the Al wiring layer 4 or the Al protection film 6, the deterioration of the reliability of a semiconductor device by means of adopting a laser trimming method can be prevented.
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Inventors:
ONOSAKA JUN
MANJIYOUME MASAZOU
MANJIYOUME MASAZOU
Application Number:
JP18912797A
Publication Date:
January 29, 1999
Filing Date:
June 30, 1997
Export Citation:
Assignee:
MITSUMI ELECTRIC CO LTD
International Classes:
B23K26/351; B23K26/361; H01L21/822; H01L27/04; (IPC1-7): H01L27/04; H01L21/822; B23K26/00