Title:
QUANTUM OPTICAL SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3854560
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To remove the dependence of polarization in a quantum optical semiconductor device, having quantum dots formed by S-K mode growth in a strain heteroepitaxial system.
SOLUTION: Strain generated in the quantum dot is controlled by changing the composition of a barrier layer 14, surrounding the quantum dot 13 for optimizing the inplane component of strain accumulated in the quantum dots and the value of a constituent vertically acting on a substrate surface, thus changing the relation between the level of light holes and those of heavy ones in a balance band to a conduction band, and making larger the ratio of the interaction of the quantum dot to the luminous radiation of a TM mode, as compared with that of the interaction of the quantum dot with respect to the luminous radiation of the TE mode.
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Inventors:
Koji Ebe
Yoshiaki Nakata
Mitsuru Sugawara
Takashi Kita
Osamu Wada
Yasuhiko Arakawa
Yoshiaki Nakata
Mitsuru Sugawara
Takashi Kita
Osamu Wada
Yasuhiko Arakawa
Application Number:
JP2002273178A
Publication Date:
December 06, 2006
Filing Date:
September 19, 2002
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L29/06; H01S5/343; B82Y10/00; B82Y20/00; B82Y40/00; H01L21/205; H01L29/12; H01L33/00; H01L33/06; H01L33/30; (IPC1-7): H01S5/343; H01L21/205; H01L29/06; H01L33/00
Domestic Patent References:
| JP2000196198A | ||||
| JP2000022278A | ||||
| JP2000133876A | ||||
| JP11266004A | ||||
| JP8264893A | ||||
| JP2000196065A | ||||
| JP2003332695A | ||||
| JP2004528705A | ||||
| JP2004063957A | ||||
| JP11330606A |
Other References:
L. Chu et al.,Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots,APPLIED PHYSICS LETTERS,1999年10月11日,Vol.75, No.15,pp2247-2249
Attorney, Agent or Firm:
Tadahiko Ito