Title:
光センサー装置
Document Type and Number:
Japanese Patent JP5542259
Kind Code:
B2
Abstract:
In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.
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Inventors:
Hill 潤
long -- many -- 剛
松嵜 Takanori
West Kazuo
Maruyama Junya
long -- many -- 剛
松嵜 Takanori
West Kazuo
Maruyama Junya
Application Number:
JP2010244928A
Publication Date:
July 09, 2014
Filing Date:
November 01, 2010
Export Citation:
Assignee:
Incorporated company semiconductor energy research institute
International Classes:
H01L31/10; H01J40/14