PURPOSE: To provide an etching method to facilitate vapor phase chemical reaction etching of the oxide or nitride of metallic element and its device constitution.
CONSTITUTION: This method comprises using gaseous hydrogen and at least one kind among electron acceptive gases: A (A is hydrocarbons, such as 1 to 3C alkane, alkene or alkyneor materials formed substituting alcohol group, ketone group and the hydrogen of these hydrocarbons with halogen or halogen alone) and eliminating the constituting elements of the material to be etched from the surface of a base material discretely by the effect of the respective reactive gases. The using method comprises mixing the respective reactive gases or discretely exciting these gases with plasma and simultaneously acting the gases on the material to be etched to efficiently obtain a total etching quantity or acting the respective reactive gases discretely excited with the plasma on the material 2 to be etched by shifting the time zones to permit etching with each of the atomic layers.
MATSUI TOSHIYUKI
KIMURA HIROSHI
KOE KAZUO
OI AKIHIKO
