Title:
METHOD FOR DEPOSITING SEMICONDUCTOR MATERIAL ON SUBSTRATE AND PRODUCTION OF THIN FILM
Document Type and Number:
Japanese Patent JP2542484
Kind Code:
B2
Abstract:
PURPOSE: To control the deposition reaction of a semiconductor material and to control and improve the quality of a deposited film by irradiating a gas under reaction with a laser beam to excite chemical species and to induce fluorescence, detecting this fluorescence and depositing the semiconductor material on a substrate while measuring the relative concentration of the chemical species.
CONSTITUTION: The reactive gas is introduced into a reactor 15 via two coaxial glass tubes 20 and 25 having convergent ends 30 and 35. The base state radicals produced by this reaction are excited by a laser 40. The laser beam 45 is inputted into the reactor 15 via a series of black baffles 50 constituted to lessen the scattering of the laser beam. When the generated fluorescence is converged onto a photomultiplier 60 by a lens system 55, excitation spectra are obtained and the eventual resultant signal is averaged by a box car 65. The laser 40 and the box car 65 are interconnected by a trigger mechanism 70. The decay of the time analyzed fluorescence is displayed on a recorder 75 by the box car 65.
More Like This:
Inventors:
HENRII RII
JON PII DENUUFUBIIRU
SUTANFUOODO AARU OSHINSUKII
JON PII DENUUFUBIIRU
SUTANFUOODO AARU OSHINSUKII
Application Number:
JP30200593A
Publication Date:
October 09, 1996
Filing Date:
December 01, 1993
Export Citation:
Assignee:
ENAAJII KONBAAJON DEBAISESU INC
KYANON KK
KYANON KK
International Classes:
B01J12/00; B01J19/12; B01J19/14; C01B33/107; C01G17/04; C23C16/24; C23C16/48; C23C16/52; G01N21/64; G03G5/08; G03G5/082; (IPC1-7): B01J19/12; G01N21/64; G03G5/082
Domestic Patent References:
| JP57152462A | ||||
| JP57152463A | ||||
| JP57152464A | ||||
| JP57174450A | ||||
| JP57117449A |
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)