To provide a method of cleaving wafer by which a long sample with a length of ≥40 mm and has been difficult to be cleaved by the conventional method can be cleaved easily.
In this method, a scribed streak 2 is formed on one end edge 1a of the surface 3 of a semiconductor wafer 1 and the wafer 1 is cleaved by applying a force to the wafer 1 from the surface 3 on which the scribed streak 2 is formed. At the time of cleaving the wafer 1, a stress is applied to the wafer in such a degree that the wafer 1 is not cleaved from the other end edge 1b opposite to the end edge 1a on which the scribed streak 2 is formed, so that the cut surface of the wafer 1 may be cleaved at once when the force is applied to the end edge 1a side on which the scribed streak 2 exists thereafter.
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