To grasp step contamination by simply and quantitatively evaluating Cu without totally dissolving a silicon wafer.

The method for measuring the concentration of Cu of the silicon wafer comprises the steps of heating the wafer from the surface of the silicon wafer 10 having an EG layer formed of a polysilicon film 10a on its rear surface by sandblasting, laser irradiating or ion implanting at 300 to 600°C for 1 to 60 min, dissolving and recovering the EG layer of the rear surface of the wafer, and quantitatively analyzing the Cu concentration of the recovered liquid containing the recovered EG layer by an atomic absorption spectrometry. The method comprises the steps of heating the wafer 20 from the front surface of the wafer 20 having an epitaxial layer 20a on the front surface at 300 to 600°C for 1 to 60 min, and quantitatively analyzing the Cu concentration of the rear surface of the wafer by an atomic absorption spectrometry or a total reflection X-ray fluorescent analysis.