Biアルコキシドを使用して強誘電性皮膜を形成するための低温度CVD法

Title:

Biアルコキシドを使用して強誘電性皮膜を形成するための低温度CVD法

Document Type and Number:

Japanese Patent JP4212774

Kind Code:

B2

Abstract:

Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

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Inventors:

Frank S Hintermeier
Peter Sea Van Buskirk
Jeffrey F. Loader
Brian Sea Hendricks
Thomas H Baum
Debra A Death Rochards

Application Number:

JP2000586979A

Publication Date:

January 21, 2009

Filing Date:

December 06, 1999

Export Citation:

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Assignee:

Infineon Technologies AG

International Classes:

C23C16/18; H01L21/205; C23C16/40; C23C16/448; C23C16/56; H01L21/316; H01L21/314

Domestic Patent References:

JP9110429A
JP9504500A
JP8277197A
JP10219449A
JP9301716A
JP10256508A

Foreign References:

WO1996008587A1
WO1996040690A1

Attorney, Agent or Firm:

Toshio Yano
Toshiomi Yamazaki
Takuya Kuno

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