PURPOSE: To provide a structure wherein the temperature characteristic of an edge emission-type light-emitting diode provided with a light-emitting region and with a light-absorbing region can be improved as compared with conventional cases.

CONSTITUTION: An n-type InP current-blocking layer 53a and a p-type InP current-blocking layer 53b are formed sequentially on a p-type (100) InP substrate 51. A first groove 55a and a second groove 55b whose depth reaches the substrate 51 from two mutually separated regions on the p-type InP current- blocking layer 53b, or a first groove 55a and a second groove 55b which are provided with a stripe shape in a <011> direction and whose cross section cut along a direction perpendicular to the stripe direction is an inverted trapezoid, are formed. A p-type InP lower-side clad layer 57, a light-emitting layer 59 and an n-type InP upper-side clad layer 61 are formed sequentially on a sample in which the grooves 55a, 55b have been formed. The light-emitting layer 59 is constituted of a multiple quantum well structure by an InGaAsP layer and by a second InGaAsP layer whose constitution is different from that of the layer.