To form a transparent conductive film, dielectric film, etc., on the surface of a substrate low in heat resistance by irradiating a metal oxide gel film by a sol-gel method with UV to recrystallize the metal oxide.
A metal oxide sol obtained with metal oxide or a metallic salt as the raw material is applied on the surface of a material to be coated to form the thin film of the metal oxide sol, and the thin film is irradiated with UV of ≤360nm wavelength to recrystallize the metal oxide. When the thin film is patterned, the UV to be emitted is patterned, the thin film is etched after irradiation, and the pattern of the metal oxide is obtained due to the difference in etching rate between the irradiated part and unirradiated part. The metal oxide used in the gel is exemplified by In2O3 and In2O3-SnO2 and is the single or multiple oxide of ≥2 kinds of metals selected from Li, Be, Ba, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Zn, etc.
TOKI MOTOYUKI
AIZAWA MAMORU
