FLAT SURFACE POLISHING METHOD OF POLYCRYSTALLINE SILICON SUBSTRATE

Title:

FLAT SURFACE POLISHING METHOD OF POLYCRYSTALLINE SILICON SUBSTRATE

Document Type and Number:

Japanese Patent JP2008264952

Kind Code:

A

Abstract:

To provide a flat surface polishing method without causing steps on a surface of a substrate in polishing of a polycrystalline silicon substrate including a single crystal with an area of 1 mm2 or more at least in one area of crystal faces.

This invention relates to the flat surface polishing method of a polycrystalline silicon substrate made of the single crystal with the area of 1 mm2 or more at least in one area of the crystal faces with two or more crystal faces with different crystal orientations exposed on the surface of the substrate. It performs polishing by using a polishing liquid including polishing materials of an oxide of Ti, Zr, Si, Al, Ce, Ca, Mg, hydroxide, carbide, and nitride, and an oxidizer made of one kind or more of a colloidal silica, zirconium oxide, aluminum oxide, and cerium oxide.

Inventors:

SHINTANI HISAFUMI

Application Number:

JP2007112815A

Publication Date:

November 06, 2008

Filing Date:

April 23, 2007

Export Citation:

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Assignee:

SHINETSU CHEMICAL CO

International Classes:

B24B37/00; B24B37/20; C09K3/14; G11B5/84; H01L21/304

Domestic Patent References:

JPH02109332A	1990-04-23
JP2004056130A	2004-02-19
JP2001170858A	2001-06-26
JPH09151295A	1997-06-10

Attorney, Agent or Firm:

Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura

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