Title:
VERY FINE STRUCTURE FORMING METHOD AND MANUFACTURE OF FIELD EMISSION TYPE ELECTRON SOURCE
Document Type and Number:
Japanese Patent JP3171423
Kind Code:
B2
Abstract:
PURPOSE: To provide a method of manufacturing a field emission type electron source with excellent reproductive, performance which is provided with a cathode having a steep tip fort
CONSTITUTION: After a silicon oxide film 12 is formed in the surface of a silicon substrate 11, a mask 13 for etching which has a first diameter and a mask 14 for a monitor which has a second diameter to be smaller by a predetermined dimensional difference of the minimum exposure dimension or less, than the first diameter are formed by lithography. When the diameter of the top of a second very fine three- dimensional structure body 16 of circular cone trapezoidal form on the lower side of the mask for a monitor becomes a zero and the etching of the silicon substrate 11 is finished at the point of time when the mask for a monitor leaves, the diameter of the top surface of a first very fine three-dimensional structure body becomes a predetermined dimensional difference. Next, after a silicon oxide film having the thickness of about half of the predetermined dimensional difference is formed in the side surface of the first very fine three-dimensional structure body, the silicon oxide film is removed and then the side surface part of the first very fine three-dimensional structure body is removed to obtain a cathode having a steep tip form.
Inventors:
Yoshikazu Hori
Keisuke Koga
Keisuke Koga
Application Number:
JP19838994A
Publication Date:
May 28, 2001
Filing Date:
August 23, 1994
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01J9/02; H01J1/30; H01J1/304; (IPC1-7): H01J9/02
Domestic Patent References:
| JP461729A |
Attorney, Agent or Firm:
Hiroshi Maeda (2 outside)