Title:
WAFER CUTTING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/019819
Kind Code:
A1
Abstract:
A wafer cutting method, comprising: providing a device wafer (10); using a first laser cutting technique to carry out downward grooving along a front face of the device wafer (10), so as to form a first groove (410) in the front face of the device wafer (10); removing residues generated when the first groove (410) is formed; temporarily bonding the front face of the device wafer (10) and a slide glass (500); and using a plasma cutting technology to carry out downward grooving along a back face of the device wafer (10), so as to form a second groove (420, 430) in the back face of the device wafer (10), wherein the first groove (410) communicates with the second groove (420, 430) to form a cutting path.
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Inventors:
LI LINYU (CN)
ZHANG JINGHUI (CN)
ZHANG JINGHUI (CN)
Application Number:
PCT/CN2021/136539
Publication Date:
February 23, 2023
Filing Date:
December 08, 2021
Export Citation:
Assignee:
HUBEI 3D SEMICONDUCTOR INTEGRATED INNOVATION CENTER CO LTD (CN)
HUBEI YANGTZE MEMORY LABORATORIES (CN)
HUBEI YANGTZE MEMORY LABORATORIES (CN)
International Classes:
B23K26/38; B23K10/00; B23K26/402; B23K37/00; H01L21/78
Foreign References:
| CN113649709A | 2021-11-16 | |||
| CN110838439A | 2020-02-25 | |||
| CN111489965A | 2020-08-04 | |||
| CN109920759A | 2019-06-21 | |||
| US20200294791A1 | 2020-09-17 | |||
| US20070111472A1 | 2007-05-17 |
Attorney, Agent or Firm:
SHANGHAI SAVVY IP AGENCY CO., LTD. (CN)
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