Title:
THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREFOR, COMPOUND ETCHING SOLUTION, AND ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2024/087174
Kind Code:
A1
Abstract:
The embodiments of the present disclosure provide a thin film transistor device and a manufacturing method therefor, a compound etching solution, and an array substrate. The method comprises: forming an active structure material layer comprising an active material layer and an ohmic contact material layer, and a source-drain material layer on a base substrate; and subjecting the source-drain material layer and the active structure material layer to a wet etching process by using a composite etching solution, so as to form a source-drain electrode layer and an active structure comprising an ohmic contact layer and an active layer, wherein the wet etching process includes etching the source-drain material layer and oxidizing part of the active structure material layer with a first etching solution of the compound etching solution, and etching the oxidized part of the active structure material layer with a second etching solution of the compound etching solution; and the ohmic contact layer is located in a region overlapping with the source-drain electrode layer in the direction perpendicular to the main surface of the base substrate, and in the direction perpendicular to the main surface of the base substrate, an orthographic projection of the ohmic contact layer on the base substrate is located within an orthographic projection range of the source-drain electrode layer on the base substrate.
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Inventors:
WU ZHAOJIAN (CN)
ZHANG FUGANG (CN)
XU YADONG (CN)
ZHENG XIAOQI (CN)
XIA YINGYING (CN)
ZHANG RUI (CN)
YI DINGLI (CN)
ZHANG RUIHAO (CN)
YANG SHENGBIAO (CN)
ZHANG YUE (CN)
SUN MENGXIANG (CN)
PENG GANG (CN)
QIAO MINGDI (CN)
YANG ZIHENG (CN)
LU GAO (CN)
DAI WEI (CN)
WANG ZHENYU (CN)
ZHANG FUGANG (CN)
XU YADONG (CN)
ZHENG XIAOQI (CN)
XIA YINGYING (CN)
ZHANG RUI (CN)
YI DINGLI (CN)
ZHANG RUIHAO (CN)
YANG SHENGBIAO (CN)
ZHANG YUE (CN)
SUN MENGXIANG (CN)
PENG GANG (CN)
QIAO MINGDI (CN)
YANG ZIHENG (CN)
LU GAO (CN)
DAI WEI (CN)
WANG ZHENYU (CN)
Application Number:
PCT/CN2022/128278
Publication Date:
May 02, 2024
Filing Date:
October 28, 2022
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
WUHAN BOE OPTOELECTRONICS TECH CO LTD (CN)
WUHAN BOE OPTOELECTRONICS TECH CO LTD (CN)
International Classes:
H01L29/786; H01L21/336
Foreign References:
| CN113889434A | 2022-01-04 | |||
| CN106684037A | 2017-05-17 | |||
| CN109524419A | 2019-03-26 | |||
| CN113113475A | 2021-07-13 | |||
| CN114164003A | 2022-03-11 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
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