SUBSTRATE-TRIGGERED DIRECTIONAL SOLIDIFICATION PROCESS FOR SINGLE CRYSTAL SUPERALLOY

WIPO Patent Application WO/2021/196713

A1

A substrate-triggered directional solidification process for a single crystal superalloy, comprising the following steps: (1) preparing a single crystal substrate material that matches the crystallographic features of a single crystal superalloy; (2) preparing a single crystal substrate chilling disc by using the obtained single crystal substrate material; and (3) applying the obtained single crystal substrate chilling disc to directional solidification equipment for high-temperature alloy smelting and directional solidification preparation to obtain a single crystal superalloy product. Compared with a crystal selection method and a seed crystal method+ a crystal selection method, in this process, the overall height of a casting is reduced by eliminating a spiral crystal selector while precisely controlling the orientation of a single crystal superalloy, thereby achieving the purpose of enhancing axial heat dissipation, improving the temperature gradient of a mushy zone and eliminating stray grains near an edge plate, thereby not only greatly improving the preparation quality and preparation success rate of blades, but also reducing the preparation costs of single crystal superalloy blades.

ZENG LONG (CN)
XIA MINGXU (CN)
LI JUN (CN)
WANG BINQIANG (CN)
LI JIANGUO (CN)

PCT/CN2020/134913

October 07, 2021

December 09, 2020

Click for automatic bibliography generation  

UNIV SHANGHAI JIAOTONG (CN)

C30B11/00; B22D27/04; C22C19/05; C30B29/52

US4714101A	1987-12-22
CA1142839A	1983-03-15
CN111364096A	2020-07-03
CN107747120A	2018-03-02
CN108080603A	2018-05-29
CN109082710A	2018-12-25

SHANGHAI KESHENG INTELLECTUAL PROPERTY AGENCY LTD. (CN)

View/Download PDF      PDF Help

Previous Patent: IMPELLER HAVING IMPROVED STRUCTURE

Next Patent: SMART PEN