Title:
SUBSTRATE ETCHING METHOD AND SUBSTRATE ETCHING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/096543
Kind Code:
A1
Abstract:
A substrate etching method according to the present invention comprises: a high-temperature etching step of exposing a substrate on which a silicon oxide film and a silicon nitride film are stacked to an etchant at a first temperature and etching the substrate; and a low-temperature etching step of exposing the substrate to an etchant at a second temperature lower than the first temperature and etching the substrate with higher etching selectivity of the silicon nitride film to the silicon oxide film than in the high-temperature etching step.
Inventors:
LEE SEUNG HOON (KR)
MO SUNG WON (KR)
LEE YANG HO (KR)
HAN HEUNG SOO (KR)
BAE JEONG HYUN (KR)
KI BEOM SU (KR)
MO SUNG WON (KR)
LEE YANG HO (KR)
HAN HEUNG SOO (KR)
BAE JEONG HYUN (KR)
KI BEOM SU (KR)
Application Number:
PCT/KR2023/017182
Publication Date:
May 10, 2024
Filing Date:
November 01, 2023
Export Citation:
Assignee:
ZEUS CO LTD (KR)
International Classes:
H01L21/311; H01L21/67
Foreign References:
| KR20200054102A | 2020-05-19 | |||
| JPH09275091A | 1997-10-21 | |||
| JP2020047886A | 2020-03-26 | |||
| KR20160134559A | 2016-11-23 | |||
| KR20200062327A | 2020-06-03 |
Attorney, Agent or Firm:
AJU INTERNATIONAL LAW & PATENT GROUP (KR)
Download PDF: