Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2021/019992
Kind Code:
A1
Abstract:
The purpose of the present disclosure is to provide a sputtering target which is reduced in the contamination with fluorine element that is an impurity, and whereby it becomes possible to prevent the occurrence of fluorine-induced abnormal discharging and to form a thin film having good orientation properties when a thin film is formed using the sputtering target. The sputtering target of the present disclosure contains aluminum and further contains one or both of a rare earth element and a titanium-group element, and is characterized in that the content of fluorine is 100 ppm or less.

Inventors:
MARUKO TOMOHIRO (JP)
SUZUKI YU (JP)
OTOMO SHOHEI (JP)
NAKAMURA HIRONOBU (JP)
Application Number:
PCT/JP2020/025281
Publication Date:
February 04, 2021
Filing Date:
June 26, 2020
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FURUYA METAL CO LTD (JP)
International Classes:
C23C14/34; C22C1/04; C22C14/00; C22C16/00; C22C21/00; C22C27/00; C22C28/00; C22C30/00
Domestic Patent References:
WO2017213185A12017-12-14
Foreign References:
JPH08134635A1996-05-28
JP2003166052A2003-06-13
CN107841639A2018-03-27
JP2001028348A2001-01-30
JP2012012673A2012-01-19
JP2015096647A2015-05-21
Other References:
KAZUHIKO KANO ET AL., DENSO TECHNICAL REVIEW, vol. 17, 2012, pages 202 - 207
See also references of EP 4006196A4
Attorney, Agent or Firm:
IMASHITA, Katsuhiro et al. (JP)
Download PDF:



 
Previous Patent: SPUTTERING TARGET

Next Patent: PARTITION-WALL-TYPE HEAT EXCHANGER