SILICON CARBIDE SUBSTRATE, EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE

Title:

SILICON CARBIDE SUBSTRATE, EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2024/095640

Kind Code:

A1

Abstract:

This silicon carbide substrate has a main surface, and contains vanadium and at least one element that is selected from among nitrogen, boron and aluminum. The main surface comprises a center, a first position, a second position, a third position and a fourth position. If the value obtained by dividing the vanadium concentration by the absolute value of the value obtained by subtracting the boron concentration and the aluminum concentration from the nitrogen concentration is taken as the compensation ratio, the compensation ratio is 2.0 or more at the center, at the first position, at the second position, at the third position and at the fourth position.

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Inventors:

SAKAIYA SHOGO (JP)

Application Number:

PCT/JP2023/034945

Publication Date:

May 10, 2024

Filing Date:

September 26, 2023

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)

International Classes:

C30B29/36; C30B23/06; H01L21/20; H01L21/338; H01L29/778; H01L29/812

Foreign References:

JP2006111478A	2006-04-27
JP2016530197A	2016-09-29
JP2016056088A	2016-04-21
JP2016507467A	2016-03-10

Attorney, Agent or Firm:

FUKAMI PATENT OFFICE, P.C. (JP)

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