SIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SIC SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/243557

A1

The purpose of the present invention is to provide an SiC semiconductor device having properties allowing for the greatest possible increase in the strength of the SiC semiconductor device when an SiC semiconductor device (1) is cut out from an SiC semiconductor wafer (11) by a scribing and breaking (SnB) technique. Also provided is a method of manufacturing this SiC semiconductor device.　This SiC semiconductor device is obtained by using a scribing tool to form a scribe line (L) on the SiC semiconductor wafer (11), and thereafter applying external force along the scribe line (L) to divide into parts, wherein a longitudinal stripe (TL) continuous with a C surface is formed in a side wall surface of the SiC semiconductor device (1), from a predetermined depth excluding a plastic deformation region of an Si surface and a vertical crack region formed directly therebelow, the longitudinal stripe (TL) satisfying the condition of being "rectilinear", or the condition "where the C surface is a lower surface, the external angle θ of an intersecting part formed between the longitudinal stripe (TL) extending upward from the C surface and a bent stripe (KL) where the longitudinal strip (TL) is bent for the first time is within 10°".

TANAKA MAKI (JP)
KITAICHI MITSURU (JP)

PCT/JP2023/021511

December 21, 2023

June 09, 2023

Click for automatic bibliography generation  

MITSUBOSHI DIAMOND IND CO LTD (JP)

H01L21/301; B28D5/00

WO2020183580A1

2020-09-17

JP2012156155A	2012-08-16
JP2012156228A	2012-08-16

YASUDA & OKAMOTO IP LAW FIRM (JP)

View/Download PDF      PDF Help

Previous Patent: FIELD EFFECT TRANSISTOR

Next Patent: INFORMATION PROCESSING DEVICE, PROGRAM, AND INFORMATION PROCESSING SYSTEM