Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/093021
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a semiconductor structure and a preparation method therefor. The semiconductor structure comprises: a substrate, which comprises an array area, a peripheral area, and a contact area located between the array area and the peripheral area; and a word line, which extends through the array area and the contact area to the peripheral area, and comprises a first part, a second part and a third part, wherein the first part is located in the array area, the second part is located in the contact area, the third part is located in the peripheral area, and the top surface of the second part is arranged staggered from the top surface of the first part and the top surface of the third part. During the preparation of the semiconductor structure, in the second part, a polycrystalline silicon layer on the surface of the word line can be removed before a via hole for accommodating a conductive contact structure is formed, or the polycrystalline silicon layer is not directly formed on the surface of the word line, such that residual polycrystalline silicon caused by insufficient removal of the polycrystalline silicon layer can be avoided, thereby avoiding an open circuit between the word line and the conductive contact structure, and thus improving the reliability of the semiconductor structure.
Inventors:
WAN WEI (CN)
Application Number:
PCT/CN2023/070662
Publication Date:
May 10, 2024
Filing Date:
January 05, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H10B12/00; H01L21/768
Foreign References:
| CN113745193A | 2021-12-03 | |||
| CN112951825A | 2021-06-11 | |||
| CN113517232A | 2021-10-19 | |||
| CN110021599A | 2019-07-16 | |||
| CN112992901A | 2021-06-18 | |||
| CN107994018A | 2018-05-04 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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