Title:
SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE MANUFACTURING METHOD, AND GAS ANALYSIS DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/124197
Kind Code:
A1
Abstract:
The present invention is a distributed feedback semiconductor laser element (3) that increases the intensity of a single-mode light while stably outputting the same, and has a diffraction grating (3M) formed on a waveguide (3L), wherein: the waveguide (3L) comprises a diffraction grating section (301) having the diffraction grating (3M) formed therein, and a flat section (302) having a region that does not have the diffraction grating (301) formed therein and is wider than the diffraction grating section (301); the flat section (302) has a connecting section (303) having a region that has a width that changes continuously approaching the site of connection with the diffraction grating section (301); and a highly reflective film (HR) is provided to an end surface on the opposite side of the flat section (302) from the connecting section (303), and an anti-reflective film (AR) is provided to an end surface on the opposite side of the diffraction grating section (301) from the connecting section (303).
Inventors:
MATSUHAMA MAKOTO (JP)
TERAKADO TOMOJI (JP)
AWANE YUSUKE (JP)
TERAKADO TOMOJI (JP)
AWANE YUSUKE (JP)
Application Number:
PCT/JP2021/044328
Publication Date:
June 16, 2022
Filing Date:
December 02, 2021
Export Citation:
Assignee:
HORIBA LTD (JP)
International Classes:
G01N21/3504; G01N21/39; H01S5/12
Domestic Patent References:
| WO2019116660A1 | 2019-06-20 | |||
| WO2019116657A1 | 2019-06-20 |
Foreign References:
| JPH11340563A | 1999-12-10 | |||
| JP2002368327A | 2002-12-20 | |||
| JP2007243072A | 2007-09-20 | |||
| JPH05218594A | 1993-08-27 | |||
| US20030198269A1 | 2003-10-23 | |||
| CN105161976A | 2015-12-16 | |||
| JPH08107253A | 1996-04-23 |
Attorney, Agent or Firm:
NISHIMURA, Ryuhei (JP)
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