Title:
SEMICONDUCTOR DEVICE AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/095108
Kind Code:
A1
Abstract:
Provided is a semiconductor device that can be miniaturized or highly integrated. The semiconductor device comprises: a first insulator on a substrate; a second insulator on the first insulator; a third insulator on the second insulator; an oxide semiconductor disposed on the second insulator and covering the third insulator; a first conductor and second conductor on the oxide semiconductor; a fourth insulator disposed on the first conductor and the second conductor; a fifth insulator disposed on the oxide semiconductor; and a third conductor disposed on the fifth insulator. In a region between the first conductor and the second conductor, the second insulator and the fourth insulator have an opening that reaches the oxide semiconductor and that reaches the first insulator in a region not overlapping the oxide semiconductor. The fifth insulator and the third conductor are disposed in the opening. In a cross-sectional view in a channel width direction, the height of the third insulator is greater than the width of the third insulator. In a region not overlapping the oxide semiconductor in the opening, a bottom surface of the third conductor is positioned lower than a bottom surface of the oxide semiconductor.
Inventors:
YAMAZAKI SHUNPEI (JP)
KUNITAKE HITOSHI (JP)
OOTA MASASHI (JP)
SAITO SATORU (JP)
KUNITAKE HITOSHI (JP)
OOTA MASASHI (JP)
SAITO SATORU (JP)
Application Number:
PCT/IB2023/060831
Publication Date:
May 10, 2024
Filing Date:
October 27, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO LTD (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H10B12/00; H10B99/00
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