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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/095110
Kind Code:
A1
Abstract:
Provided is a semiconductor device that can be miniaturized or highly integrated. The present invention includes first to third transistors and first to fourth insulating layers. The first transistor has first to third conductive layers, a fifth insulating layer, and a first semiconductor layer; the first insulating layer, the third conductive layer, and the second insulating layer above the first conductive layer have a first opening; the fifth insulating layer is in contact with a sidewall of the first opening; the first semiconductor layer is in contact with the bottom part of the first opening and a side surface of the fifth insulating layer; the second conductive layer is above and in contact with the first semiconductor layer; the second (third) transistor has the second, fourth, and fifth (sixth to eighth) conductive layers, the sixth (seventh) insulating layer, and the second (third) semiconductor layers; the third (fourth) insulating layer and the fourth (seventh) conductive layer above the second (sixth) conductive layer have a second (third) opening; the second (third) semiconductor layer is in contact with the bottom part and sidewall of the second (third) opening; the sixth (seventh) insulating layer is above and in contact with the second (third) semiconductor layer; and the fifth (eighth) conductive layer is above and in contact with the sixth (seventh) insulating layer.

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Inventors:
KIMURA HAJIME (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/060833
Publication Date:
May 10, 2024
Filing Date:
October 27, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/822; H01L21/8234; H01L27/04; H01L27/088; H10B12/00; H10B41/70
Domestic Patent References:
WO2018203181A12018-11-08
Foreign References:
JP2016149552A2016-08-18
US20190305137A12019-10-03
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