Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2024/095578
Kind Code:
A1
Abstract:
This semiconductor device 1 is provided with: a plurality of trench gates 50 which are positioned in an IGBT region 20A; a plurality of first dummy trenches 60 which are positioned in a diode region 20B; and a plurality of second dummy trenches 70 which are positioned in a boundary part 20C between the IGBT region and the diode region. The plurality of second dummy trenches are arranged at a distance from each other in a direction in which the IGBT region and the diode region are connected. The plurality of second dummy trenches each have a deep portion 76 at least in a part thereof, the deep portion being formed deeper than the plurality of trench gates and the plurality of first dummy trenches.
Inventors:
OKAWARA JUN (JP)
Application Number:
PCT/JP2023/030751
Publication Date:
May 10, 2024
Filing Date:
August 25, 2023
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L29/12; H01L29/739
Domestic Patent References:
| WO2019116696A1 | 2019-06-20 |
Foreign References:
| JP2020043237A | 2020-03-19 | |||
| JP2009177221A | 2009-08-06 | |||
| JP2021190657A | 2021-12-13 | |||
| JP2022015861A | 2022-01-21 |
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
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