Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/092720
Kind Code:
A1
Abstract:
The semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a dielectric layer, and a field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction and a two-dimensional electron gas (2DEG) region adjacent to the heterojunction. The dielectric layer covers the second nitride-based semiconductor layer. The field plate is conformally disposed on the dielectric layer and includes a plurality of horizontal portions at different heights and a plurality of connecting portions, in which any two of the adjacent horizontal portions are connected by the corresponding connecting portion, such that an entirety of the field plate is continuous in a vertical cross-sectional view of the semiconductor device.
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Inventors:
ZHANG XIAO (CN)
ZHANG LIJIE (CN)
ZHANG LIJIE (CN)
Application Number:
PCT/CN2022/129876
Publication Date:
May 10, 2024
Filing Date:
November 04, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/40
Foreign References:
| CN113519064A | 2021-10-19 | |||
| CN114144891A | 2022-03-04 | |||
| CN101976686A | 2011-02-16 | |||
| CN1639875A | 2005-07-13 | |||
| JP2014222724A | 2014-11-27 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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