Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/092689
Kind Code:
A1
Abstract:
The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate including a p-well; a first transistor; and a second transistor. The first transistor includes a first high-voltage (HV) n-well in the p-well; a first source contact on the substrate; a first drain contact on the substrate; a first gate contact on the substrate and between the first source contact and the first drain contact. The second transistor includes a second HV n-well in the p-well; a second source contact on the substrate; a second drain contact on the substrate; a second gate contact on the substrate and between the second source contact and the second drain contact. A portion of the p-well is between the first HV n-well and the second HV n-well.
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Inventors:
LI SICHAO (CN)
YAN HUI (CN)
ZHOU CHUNHUA (CN)
YAN HUI (CN)
ZHOU CHUNHUA (CN)
Application Number:
PCT/CN2022/129755
Publication Date:
May 10, 2024
Filing Date:
November 04, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L27/088
Foreign References:
| US20170221885A1 | 2017-08-03 | |||
| US20170141105A1 | 2017-05-18 | |||
| CN108701693A | 2018-10-23 | |||
| US20040150018A1 | 2004-08-05 | |||
| US20050280101A1 | 2005-12-22 | |||
| US20170012043A1 | 2017-01-12 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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