Title:
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/047454
Kind Code:
A1
Abstract:
The present invention provides a highly integrated and reliable semiconductor device. A back gate of a second transistor is electrically connected to a control signal line that provides a control signal for controlling the threshold voltage of the second transistor. One of the source or the drain of the second transistor is electrically connected to a readout word line that provides a readout word signal. The other of the source or the drain of the second transistor is electrically connected to a readout bit line that reads out a potential corresponding to data. In a memory cell that is selected in a data readout period, a low level is provided as the readout word signal and a high level is provided as the control signal. In a memory cell that is unselected in a data readout period, a high level is provided as the readout word signal and a low level is provided as the control signal.
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Inventors:
INOUE HIROKI (JP)
MATSUZAKI TAKANORI (JP)
KOBAYASHI HIDETOMO (JP)
OKAMOTO YUKI (JP)
MATSUZAKI TAKANORI (JP)
KOBAYASHI HIDETOMO (JP)
OKAMOTO YUKI (JP)
Application Number:
PCT/IB2023/058240
Publication Date:
March 07, 2024
Filing Date:
August 17, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G11C11/405; G11C11/4091
Domestic Patent References:
| WO2019220259A1 | 2019-11-21 |
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