Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/090455
Kind Code:
A1
Abstract:
The present invention relates to a semiconductor device and a manufacturing method that enables noise to be reduced. A semiconductor device according to the present invention is provided with: a drain region and a source region disposed in a prescribed region of a semiconductor substrate; a channel region disposed between the drain region and the source region; and a gate electrode formed on the channel region. The channel region is provided with: a first impurity diffusion region; and a second impurity diffusion region that is an impurity diffusion region of the same conductivity type as that of the first impurity diffusion region, that has a different impurity concentration from that of the first impurity diffusion region, and that is formed at a substantially central portion of the first impurity diffusion region. The present invention is applicable to, for example, transistors constituting an image capturing device.
Inventors:
TONEGAWA SUSUMU (JP)
Application Number:
PCT/JP2016/083465
Publication Date:
June 01, 2017
Filing Date:
November 11, 2016
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/336; H01L21/265; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/08; H01L27/088; H01L27/146; H01L29/78; H04N5/369; H04N101/00
Foreign References:
| JP2015118973A | 2015-06-25 | |||
| JPH08274330A | 1996-10-18 | |||
| JPH098305A | 1997-01-10 | |||
| JPH11274486A | 1999-10-08 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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