Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/028682
Kind Code:
A1
Abstract:
Provided is a semiconductor device that demonstrates fast access speed. This semiconductor device has a first storage layer, a second storage layer, and a circuit layer. The first storage layer has a plurality of first storage circuits, the second storage layer has a second storage circuit, and the circuit layer has a selector. The selector has a plurality of input terminals and an output terminal. The first storage layer is positioned below the circuit layer, and the second storage layer is positioned above the circuit layer. The plurality of first storage circuits are electrically connected to the plurality of input terminals, and the second storage circuit is electrically connected to the output terminal. The selector has a function of enabling conduction between one selected from the plurality of input terminals, and the output terminal of the selector. The semiconductor device has a function for writing data read out from the second storage circuit to the first storage circuit via the selector.
Inventors:
YAMAZAKI SHUNPEI (JP)
KIMURA HAJIME (JP)
KOBAYASHI HIDETOMO (JP)
MATSUZAKI TAKANORI (JP)
OKAMOTO YUKI (JP)
INOUE HIROKI (JP)
KIMURA HAJIME (JP)
KOBAYASHI HIDETOMO (JP)
MATSUZAKI TAKANORI (JP)
OKAMOTO YUKI (JP)
INOUE HIROKI (JP)
Application Number:
PCT/IB2023/057379
Publication Date:
February 08, 2024
Filing Date:
July 20, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B12/00; G11C5/04; G11C11/405; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/786; H01L29/788; H01L29/792; H10B10/10; H10B41/70; H10B63/00; H10B63/10; H10B99/00; H10N70/00; H10N99/00
Domestic Patent References:
| WO2020170067A1 | 2020-08-27 |
Foreign References:
| JP2020123612A | 2020-08-13 | |||
| JP2016131253A | 2016-07-21 | |||
| JP2012256808A | 2012-12-27 |
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