Title:
SELECTIVE ETCHING SOLUTION FOR 3D NAND STRUCTURAL SHEET
Document Type and Number:
WIPO Patent Application WO/2024/077875
Kind Code:
A1
Abstract:
The present invention provides a selective etching solution for a 3D NAND structural sheet. The etching solution comprises phosphoric acid, a silane additive 1, and a silane additive 2, with the balance being water. The etching solution of the present invention has etching selectivity on a silicon oxide film and a silicon nitride film, and can selectively remove the silicon nitride film, so that the service life of the etching solution is prolonged; moreover, the etching solution can be suitable for etching of a laminated structure.
Inventors:
LI SHAOPING (CN)
HE ZHAOBO (CN)
FENG FAN (CN)
YE RUI (CN)
ZHANG TING (CN)
BAN CHANGSHENG (CN)
FENG KAI (CN)
WANG SHUPING (CN)
PENG FEI (CN)
HE ZHAOBO (CN)
FENG FAN (CN)
YE RUI (CN)
ZHANG TING (CN)
BAN CHANGSHENG (CN)
FENG KAI (CN)
WANG SHUPING (CN)
PENG FEI (CN)
Application Number:
PCT/CN2023/083387
Publication Date:
April 18, 2024
Filing Date:
March 23, 2023
Export Citation:
Assignee:
HUBEI SINOPHORUS ELECTRONIC MAT CO LTD (CN)
International Classes:
C04B41/53; C09K13/06; H10B41/20; H10B43/20
Foreign References:
| CN110157434A | 2019-08-23 | |||
| CN113544822A | 2021-10-22 | |||
| US20090101626A1 | 2009-04-23 |
Attorney, Agent or Firm:
YICHANG THREE GORGES PATENT (CN)
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