Title:
RESONANT CHIP AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/104012
Kind Code:
A1
Abstract:
The present application relates to the field of semiconductors, and relates to a resonant chip and a manufacturing method therefor. The resonant chip comprises: a dielectric layer. A resonant channel is provided on the dielectric layer; the dielectric layer comprises a resonator and a transitional dielectric layer; a resonator is formed on the surface of the transitional dielectric layer; the resonant channel sequentially passes through the resonator and the transitional dielectric layer; the resonator is used for forming a resonance response with excitation light, and confining electric field energy in the resonant channel; the transitional dielectric layer is used for blocking the passage of biomolecules, so that a biological reaction only occurs in the resonant channel. Compared with a metal cladding layer, the use of the dielectric layer in the present application avoids the problems of energy loss of electromagnetic waves and light quenching. The resonant channel is placed into the resonator to bind an electromagnetic field in the resonant channel, so that a single-molecule fluorescence process in the resonant channel is enhanced. The biological reaction only occurs in the resonant channel, so that the probability of capturing reactants is controlled and improved.
Inventors:
LI YI (CN)
YANG YATAO (CN)
YANG YATAO (CN)
Application Number:
PCT/CN2022/136825
Publication Date:
June 15, 2023
Filing Date:
December 06, 2022
Export Citation:
Assignee:
UNIV SOUTHERN SCI & TECH (CN)
International Classes:
H01P7/10
Foreign References:
| CN114156625A | 2022-03-08 | |||
| CN105209883A | 2015-12-30 | |||
| US20030210396A1 | 2003-11-13 | |||
| CN102608701A | 2012-07-25 | |||
| CN103439317A | 2013-12-11 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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