Title:
RESIST PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2024/070535
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for forming a resist pattern having excellent pattern rectangularity. Provided is a method for forming a resist pattern, the method comprising: a step for applying a resist underlayer film-forming composition onto a substrate directly or indirectly; a step for forming a metal-containing resist film on the resist underlayer film formed by the resist underlayer film-forming composition application step; a step for exposing the metal-containing resist film to light; a step for preparing a developer solution; and a step for dissolving a light-exposed part in the metal-containing resist film that has been exposed to light using the developer solution to form a resist pattern.
Inventors:
MARUYAMA KEN (JP)
Application Number:
PCT/JP2023/032396
Publication Date:
April 04, 2024
Filing Date:
September 05, 2023
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; C08F232/08; G03F7/11; G03F7/20
Domestic Patent References:
| WO2018179704A1 | 2018-10-04 | |||
| WO2018123388A1 | 2018-07-05 | |||
| WO2006129565A1 | 2006-12-07 | |||
| WO2016035497A1 | 2016-03-10 |
Foreign References:
| JP2014220484A | 2014-11-20 | |||
| JPS5017630A | 1975-02-25 | |||
| JP2015102838A | 2015-06-04 | |||
| JP2015201622A | 2015-11-12 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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