Title:
RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2024/053689
Kind Code:
A1
Abstract:
The present invention can provide: a resist composition which can form a resist pattern having both of improved sensitivity and lithographic properties; and a resist pattern formation method. The present invention relates to a resist composition which generates an acid when exposed to light and of which the solubility in a liquid developer changes by the action of an acid, the resist composition comprising a base component (A) of which the solubility in a liquid developer changes by the action of an acid, an acid generator component (B) which generates an acid when exposed to light, a first acid diffusion controlling component (D1) and a second acid diffusion controlling component (D2), in which the first acid diffusion controlling component (D1) comprises a compound (d1-1) represented by general formula (d1-1) described in the description, and the second acid diffusion controlling component (D2) comprises a compound (d2-1) represented by general formula (d2-1) described in the description.
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Inventors:
NAKAMURA KUMI (JP)
TAKAKI DAICHI (JP)
NAKAMURA TSUYOSHI (JP)
TAKAKI DAICHI (JP)
NAKAMURA TSUYOSHI (JP)
Application Number:
PCT/JP2023/032586
Publication Date:
March 14, 2024
Filing Date:
September 06, 2023
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
International Classes:
G03F7/004; C08F20/00; G03F7/039; G03F7/20
Domestic Patent References:
| WO2022244682A1 | 2022-11-24 |
Foreign References:
| JP2021081702A | 2021-05-27 | |||
| JP2020203984A | 2020-12-24 |
Attorney, Agent or Firm:
EIKOH, P.C. (JP)
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