Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/182042
Kind Code:
A1
Abstract:
The present invention provides a reflective mask blank which enables the achievement of a phase shift film that has satisfactory optical characteristics, while being more decreased in crystallinity (i. e., being more microcrystallized or more amorphousized). A reflective mask blank which sequentially comprises, on a main surface of a substrate, a multilayer reflective film and a thin film for pattern formation in this order, and which is characterized in that: the thin film has a single layer structure which is composed of a ruthenium-containing layer that contains at least ruthenium, nitrogen and oxygen, or a multilayer structure which comprises a ruthenium-containing layer; and if an X-ray diffraction profile of the ruthenium-containing layer is obtained by performing analysis by means of in-plane measurement of X-ray diffractometry, and I_P1 is the maximum value of the diffraction intensity within the diffraction angle 2θ range of from 65° to 75° and I_avg is the average of the diffraction intensities within the diffraction angle 2θ range of from 55° to 65°, I_P1/I_avg is more than 1.0 but less than 3.0.
Inventors:
FUKASAWA IKUYA (JP)
IKEBE YOHEI (JP)
IKEBE YOHEI (JP)
Application Number:
PCT/JP2021/005881
Publication Date:
September 16, 2021
Filing Date:
February 17, 2021
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; G03F1/32
Domestic Patent References:
| WO2019225736A1 | 2019-11-28 | |||
| WO2019225737A1 | 2019-11-28 | |||
| WO2010113700A1 | 2010-10-07 |
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
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