RAW MATERIAL FOR OBTAINING ABRASIVE GRAINS AND METHOD FOR SELECTING SAME, ABRASIVE GRAIN PRODUCTION METHOD, POLISHING SOLUTION PRODUCTION METHOD, POLISHING METHOD, COMPONENT PRODUCTION METHOD, AND SEMICONDUCTOR COMPONENT PRODUCTION METHOD

WIPO Patent Application WO/2024/089919

A1

This method selects a raw material for obtaining abrasive grains, wherein the raw material includes cerium, and the raw material is selected on the basis of an average value of the positron lifetime measured by positron annihilation spectroscopy. This raw material for obtaining abrasive grains includes cerium, wherein the average value of the positron lifetime measured by positron annihilation spectroscopy is 285-360 ps. This abrasive grain production method involves pulverizing the raw material. This polishing solution production method involves mixing water and abrasive grains obtained by said abrasive grain production method. This polishing method involves polishing a member to be polished using a polishing solution obtained by said polishing solution production method.

WO/2012/053660	LUBRICANT COMPOSITION FOR POLISHING GLASS SUBSTRATES AND POLISHING SLURRY
JPH11121411	ABRASIVE SLURRY, METHOD FOR POLISHING PLATINUM GROUP METAL FILM, AND METHOD FOR FORMING CELL OF SEMICONDUCTOR STORAGE DEVICE
JP7375483	Chemical mechanical polishing composition and chemical mechanical polishing method

KUBO HIROMU (JP)
LEE SANGCHUL (JP)
KAGESAWA KOICHI (JP)
NOMURA SATOYUKI (JP)

PCT/JP2023/017463

May 02, 2024

May 09, 2023

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RESONAC CORP (JP)

C09K3/14; C01F17/235; H01L21/304

WO2022070923A1	2022-04-07
WO2000073211A1	2000-12-07

CN106915761A	2017-07-04
KR20140087668A	2014-07-09
JP2007129248A	2007-05-24

HASEGAWA Yoshiki et al. (JP)

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