Title:
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2022/209150
Kind Code:
A1
Abstract:
[Problem] To provide a means which, when used for polishing works comprising polysilicon and silicon nitride, is effective in inhibiting both insufficient polishing and dishing. [Solution] A polishing composition which comprises abrasive grains, ammonia, and at least one potassium compound selected from the group consisting of potassium hydroxide and potassium salts, wherein the content of the ammonia is 0.002-0.5 mass% with respect to the whole mass of the polishing composition and the content of the potassium compound is 0.004-0.5 mass% with respect to the whole mass of the polishing composition.
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Inventors:
MAE RYOTA (JP)
TADA MASAKI (JP)
YOSHIZAKI YUKINOBU (JP)
NAGANO TAKAHITO (JP)
IKAWA HIROFUMI (JP)
TADA MASAKI (JP)
YOSHIZAKI YUKINOBU (JP)
NAGANO TAKAHITO (JP)
IKAWA HIROFUMI (JP)
Application Number:
PCT/JP2022/001321
Publication Date:
October 06, 2022
Filing Date:
January 17, 2022
Export Citation:
Assignee:
FUJIMI INC (JP)
International Classes:
C09K3/14; B24B37/00; H01L21/304
Domestic Patent References:
| WO2017126268A1 | 2017-07-27 |
Foreign References:
| JP2017178972A | 2017-10-05 | |||
| JP2015115360A | 2015-06-22 | |||
| CN112552824A | 2021-03-26 | |||
| JP2020025066A | 2020-02-13 | |||
| JP2010161201A | 2010-07-22 |
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
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