Title:
POLISHING AGENT, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT
Document Type and Number:
WIPO Patent Application WO/2024/075546
Kind Code:
A1
Abstract:
Provided is a polishing agent, a polishing method, and a method for manufacturing a semiconductor component that exhibit a good polishing speed in CMP of a surface to be polished, said surface including boron-doped silicon. The polishing agent according to the present invention is for polishing a surface to be polished, said surface including boron-doped silicon, the polishing agent including abrasive grain, an oxidant, and water, the oxidant including at least one type that is selected from a peroxide oxidant, a metal ion oxidant, and a halogen oxo acid ion oxidant.
Inventors:
NOZAWA YASUHISA (JP)
OTSUKA YUYA (JP)
KATO TOMOO (JP)
OTSUKA YUYA (JP)
KATO TOMOO (JP)
Application Number:
PCT/JP2023/034460
Publication Date:
April 11, 2024
Filing Date:
September 22, 2023
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2020255921A1 | 2020-12-24 |
Foreign References:
| JP2020025066A | 2020-02-13 | |||
| JP2016192420A | 2016-11-10 | |||
| JP2021143311A | 2021-09-24 | |||
| JP2008264952A | 2008-11-06 | |||
| US20210375625A1 | 2021-12-02 |
Attorney, Agent or Firm:
IEIRI Takeshi (JP)
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